Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

Power MOSFET’s development was partly driven by the limitations of bipolar junction transistors (BJTs). Today, this device has been the choice in power electronics applications. In this application ...

Wolfspeed (NYSE: WOLF) leads the market in the worldwide adoption of silicon carbide technologies. As the pioneers of silicon ...

International Rectifier announces an automotive DirectFET2 power MOSFET chipset optimized for dc-dc applications used in internal combustion engine (ICE) cars, hybrid, and electric vehicles.

Vishay Intertechnology, Inc. released two new devices in its industry-first family of power MOSFETs built on an enhanced process flow with strict manufacturing process controls for implantable medical ...

Alpha and Omega Semiconductor has announced the release of the AEC-Q101 qualified 1200V silicon carbide (SiC) aSiC MOSFETs in an optimised TO-247-4L package. Intended for high efficiency and ...

IGBT and Super Junction MOSFET Market · GlobeNewswire Inc. Dublin, Jan. 27, 2025 (GLOBE NEWSWIRE) -- The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ...

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...

ROHM has developed a 30V N-channel MOSFET, the AW2K21, in a common-source configuration that achieves an ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. The AW2K21 has adopted a ...

DUBLIN--(BUSINESS WIRE)--The "IGBT and Super Junction MOSFET - Global Strategic Business Report" report has been added to ResearchAndMarkets.com's offering. The global market for IGBT and Super ...