A team of researchers has proposed a new concept for magnet-based memory devices that might revolutionize information storage devices due to their potential for large-scale integration, non-volatility, and high durability. Details of their findings were ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash cell is written to electrons can be trapped on the ...

Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient electronics—devices designed to degrade safely after ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern computing devices rely on memory technologies that are not only ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.

As artificial intelligence, cloud computing, and online services continue to grow, the demand for faster and more energy-efficient computer hardware is rising rapidly. Now, researchers in Japan have developed a new type of magnetic memory that can be rewritten using a single pulse of laser light instead of electric current,

Low-Power Double Data Rate (LPDDR) emerged as a specialized high performance, low power memory for mobile phones. Since its first release in 2006, each new generation of LPDDR has delivered the bandwidth and capacity needed for major shifts in the mobile ...