This collection supports and amplifies research related to SDG 9 - Industry, innovation and infrastructure. Recent advances in understanding and manipulating spin, orbital, and charge currents via ...
Japanese scientists have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the world’s lowest write power in a significant step toward energy-efficient, ...
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Next-generation memory: Tungsten-based SOT-MRAM achieves nanosecond switching and low-power data storage
The ability to reliably switch the direction of magnetic alignment in materials, a process known as magnetization switching, is known to be central to the functioning of most memory devices. One known ...
(Nanowerk News) Our data-driven world demands more—more capacity, more efficiency, more computing power. To meet society’s insatiable need for electronic speed, physicists have been pushing the ...
A technical paper titled “Recent progress in spin-orbit torque magnetic random-access memory” was recently published by imec. “Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise ...
A new technical paper titled “Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM” was published by researchers at Georgia Institute of Technology, MIT, and Cornell University. “This ...
Our data-driven world demands more—more capacity, more efficiency, more computing power. To meet society’s insatiable need for electronic speed, physicists have been pushing the burgeoning field of ...
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