Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

For spectrum analyzers lacking a tracking generator, this broadband RF noise source is affordable and will help measure a ...

A compensated Pt100 RTD circuit has 1 mV/°C DMM output, with linearization via positive feedback, pending Part 2 ...

This FAQ analyzes the open-drain physical layer and the nuances of register-level addressing to better understand I2C communication.

Abstract: In this study, the impact of capacitive coupling (CC) caused by the parasitic capacitance components of metal-oxide semiconductor field effect transistors (MOSFETs) on the data stored in a ...

Abstract: Transistor biasing for RF-amplifiers typically is based on achieving the highest transistor speed given by the maximum oscillation frequency. However in low-power applications such as active ...