Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
Abstract: For low voltage high frequency high power pulse power supply applications, pulse power can be provided through the output storage capacitor, and this paper proposes the circuit structure of ...
If you’re a regular reader of Hackaday, you may have noticed a certain fondness for Meshtastic devices, and the LoRa protocol ...
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